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| 2N4403 Preferred Device General Purpose Transistors PNP Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 3 2 BASE Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 600 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C TO-92 CASE 29 STYLE 1 12 1 1 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N 4403 AYWW G G 2N4403 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 Preferred devices are recommended choices for future use and best overall value. 1 March, 2007 - Rev. 3 Publication Order Number: 2N4403/D 2N4403 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1) (IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 30 60 100 100 20 - - 0.75 - - - - 300 - 0.4 0.75 0.95 1.3 - (IC = 1.0 mAdc, IB = 0) (IC = 0.1 mAdc, IE = 0) (IE = 0.1 mAdc, IC = 0) (VCE = 35 Vdc, VEB = 0.4 Vdc) (VCE = 35 Vdc, VEB = 0.4 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 40 5.0 - - - - - 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) Vdc Vdc (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) fT Ccb Ceb hie hre hfe hoe 200 - - 1.5 k 0.1 60 1.0 - 8.5 30 15 k 8.0 500 100 MHz pF pF W X 10-4 - mmhos (VCC = 30 Vdc, VBE = + 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) td tr ts tf - - - - 15 20 225 30 ns ns ns ns 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ORDERING INFORMATION Device 2N4403 2N4403G 2N4403RLRA 2N4403RLRAG 2N4403RLRM 2N4403RLRMG 2N4403RLRPG Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 (Pb-Free) Shipping 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N4403 SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V < 2 ns +2 V 0 1.0 kW -16 V 10 to 100 ms, DUTY CYCLE = 2% CS* < 10 pF 200 W +14 V 0 -16 V < 20 ns -30 V 200 W 1.0 kW 1.0 to 100 ms, DUTY CYCLE = 2% CS* < 10 pF +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time TRANSIENT CHARACTERISTICS 25C 30 20 CAPACITANCE (pF) Ceb Q, CHARGE (nC) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 0.1 10 20 100C VCC = 30 V IC/IB = 10 10 7.0 5.0 Ccb QT QA 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 3. Capacitances Figure 4. Charge Data http://onsemi.com 3 2N4403 100 70 50 t, TIME (ns) 30 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10 100 70 50 30 20 VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time 200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 20 IC/IB = 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW NF, NOISE FIGURE (dB) 10 f = 1 kHz 8 6 4 2 6 4 IC = 50 mA 100 mA 500 mA 1.0 mA RS = OPTIMUM SOURCE RESISTANCE 2 0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 10 20 50 100 50 100 200 500 1 k 2 k 5 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k Figure 8. Frequency Effects Figure 9. Source Resistance Effects http://onsemi.com 4 2N4403 h PARAMETERS VCE = -10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were 1000 700 500 hfe , CURRENT GAIN 300 200 2N4403 UNIT 1 2N4403 UNIT 2 selected from the 2N4403 lines, and the same units were used to develop the correspondingly-numbered curves on each graph. 100 k hie , INPUT IMPEDANCE (OHMS) 50 k 20 k 10 k 5k 2k 1k 500 200 2N4403 UNIT 1 2N4403 UNIT 2 100 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 m hoe , OUTPUT ADMITTANCE ( mhos) 500 Figure 11. Input Impedance h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 2N4403 UNIT 1 2N4403 UNIT 2 10 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 5 2N4403 STATIC CHARACTERISTICS 3.0 h FE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 -55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 14. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 1.0 0.8 VOLTAGE (VOLTS) 0.5 0 COEFFICIENT (mV/ C) 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 2.5 0.1 0.2 0.5 1.0 2.0 qVS for VBE qVC for VCE(sat) TJ = 25C VBE(sat) @ IC/IB = 10 VBE(sat) @ VCE = 10 V 0.6 0.4 0.2 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) Figure 16. "On" Voltages Figure 17. Temperature Coefficients http://onsemi.com 6 2N4403 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X-X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X-X N 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 2N4403/D |
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